SiC capabilities 10x the breakdown electric powered discipline power of silicon, making it possible to configure higher voltage (600V to thousands of V) power devices via a thinner drift layer and better impurity concentration. Considering that most of the resistance ingredient of superior-voltage devices is situated from the drift layer https://www.facebook.com/permalink.php?story_fbid=pfbid02ws7wtHugP3ZoudX9mwAc4rpCRCXtune9gYDGeq3gjRZ9D5cuFMEhzZgUfRpGq6Bzl&id=61562415773754&__cft__[0]=AZWjseS0Mmq2qzRlSHAKtc8Zw6QdM_Pdz00psx3ZYY0Nt2EzrBZ5lBKvoyrCb3FN5AELk45PYIRnkcg3a3GeHRv0QKmtiaIvFEV62dzfcRms3hDcuGZSvsBjHoW923fpGiqCjkjSztAwBCaKRzQgiVslYoiXNOdXDwbiSCGVX_FaialRCXXQnGIIGyLi2EyFupzGzWNjwrKS3VGuxnLaaT34&__tn__=%2CO%2CP-R